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Toshiba Releases New Generation Of BiCS FLASH

Toshiba Partners with American manufacturer of flash Toshibamemory SanDisk to introduce 256GB 48-layer 3D NAND flash chips. While Toshiba holds the record of the world’s smallest flash measuring 15 nanometers, it is all set to add 3-bit tech in the 48-layered chips to add even more bytes in, increasing the storage capacity of the chips.

While the mass production of the chips has already begun, the new 3D NAND will be shipped by the end of the year.

The 48-layer stacking process exceeds the capacity of mainstream two dimensional NAND Flash memory as well as improves write/erase reliability endurance, while increasing write speeds.

The new 256GB 48-layer 3D NAND flash chips is all set to battle against Samsung’s 32-layer 3D NAND which features capacity of upto 128GB for MLC as well TLC configurations. The latter has also revealed its plans to release third generation V-NAND, the production of which would start by the end of this year.

Meanwhile, Intel and Micron have also announced to produce their 32-layer 3D NAND by the fourth quarter of this year in the form of a 256GB MLC die and a 384GB TLC die. If reports are to be believed, SK Hynix will also begin the mass production of a 36-layer 128Gb MLC die during the third quarter, while its 48-layer TLC is expected to be launched in the next year.