Plessey Releases Samples Of 350mW GaN-on-Silicon LEDs

plessey-logo-trans-350Plessey has released samples of its 350mW LED product (p/n PLB010350). The new samples come after the company first introduced its GaN on large diameter silicon LEDs in April of this year. According to the company, the GaN-on-silicon LEDs are entry level lighting products manufactured on Plessey’s 6-inch MAGICTM (Manufactured on GaN I/C) line at its Plymouth, England facility. The company says that the new LED products are targeted at a variety of solid state lighting and entertainment-type lighting products including accent lighting, wall washing, wall grazing, strip-lighting and a variety of pulse lighting applications.

Barry Dennington, Plessey’s COO, said, “The MAGIC LED product range is expanding in both light output and efficacy. The PLB010350 is our first, high current device operating at anywhere from 350mA through to 2A in pulse applications. We have also been able to demonstrate the versatility and the potential of the Plessey GaN on Si technology by constructing an LED with a relatively large die area.” Dennington added, “This new 350mW product demonstrates the inherent flexibility we have for the manufacture of LEDs with a 6-inch GaN on silicon substrate in an integrated circuit manufacturing line. We are seeing continual improvements in output efficiencies in the lab which means we will continue to launch new products in line with our product release plan.”

Plessey claims that the use of its MAGIC GaN line using standard semiconductor manufacturing processing provides yield entitlements of greater than 95% and fast processing times for a significant cost advantage over standard LEDs of similar quality.